Journal:
1. Po-Hsien Cheng, Chun-Yuan Wang, Teng-Jan Chang, Tsung-Han Shen, Yu-Syuan Cai, and Miin-Jang Chen*, “Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition,” Scientific Reports, 7, 875, 2017
2. Huan-Yu Shih, Wei-Hao Lee, Wei-Chung Kao, Yung-Chuan Chuang, Ray-Ming Lin, Hsin-Chih Lin, Makoto Shiojiri and Miin-Jang Chen*, “Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing,” Scientific Reports, 7, 39717, 2017.
3. Kuei-Wen Huang, Po-Hsien Cheng, Yu-Shu Lin, Chin-I Wang, Hsin-Chih Lin, and Miin-Jang Chen, “Tuning of the work function of bilayer metal gate by in-situ atomic layer lamellar doping of AlN in TiN interlayer, Journal of Applied Physics 122, 095103, 2017
4. Yung-Chen Cheng*, Kai-Yun Yuan, Miin-Jang Chen*, “Influence of homo-buffer layers and post-deposition rapid thermal annealing upon atomic layer deposition grown ZnO at 100 oC with three-pulsed precursors per growth cycle,” Journal of Crystal Growth 475, 39–43, 2017
5. Yu-Shu Lin, Kuei-Wen Huang, Hsin-Chih Lin*, Miin-Jang Chen*, “Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique,” Solid State Communications 258, 49–53, 2017
6. Bo-Ting Lin, Yu-Wei Lu, Jay Shieh*, and Miin-Jang Chen*,“Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing,” Journal of the European Ceramic Society, 37, 1135–1139, 2017.